An international group from the Max Planck Institute of Microstructure Physics, Germany, the University of Nebraska–Lincoln, USA, and the Johannes Kepler University, Austria, reports in Nature an atomically thin all-antiferromagnetic tunnel junction constructed by twisting two bilayers of CrSBr, a two-dimensional (2D) antiferromagnet, which shows a >700% nonvolatile tunneling magnetoresistance at zero field. Their work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.
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